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| inchange semiconductor isc product specification isc silicon npn power transistor BUX20A description collector-emitter sustaining voltage- : v ceo(sus) = 125v(min) high current capability good linearity of h fe applications designed for switching and linear applications in military and industrial equipment. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 160 v v ceo(sus) collector-emitter voltage 125 v v ebo emitter-base voltage 7 v i c collector current-continuous 40 a i cm collector current-peak 50 a i b b base current-continuous 8 a p c collector power dissipation @t c =100 140 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 0.7 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BUX20A electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 200ma ; i b = 0 125 v v ce (sat)-1 collector-emitter saturation voltage i c = 20a; i b = 2a 0.6 v v ce (sat)-2 collector-emitter saturation voltage i c = 40a; i b = 4a 1.2 v v be (sat) base-emitter saturation voltage i c = 40a; i b = 4a 2.0 v i ceo collector cutoff current v ce = 100v;i b = 0 3.0 ma i cex collector cutoff current v ce = 160v;v be = -1.5v v ce = 160v;v be = -1.5v; t c = 125 3.0 12 ma i ebo emitter cutoff current v eb = 8v; i c =0 5.0 ma h fe-1 dc current gain i c = 20a ; v ce = 2v 20 60 h fe-2 dc current gain i c = 40a ; v ce = 4v 10 f t current-gain?bandwidth product i c = 2a ; v ce = 15v; f test = 10mhz 50 mhz isc website www.iscsemi.cn 2 |
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